thin-film cascadable amplifier 10 to 1000 mhz technical data features ? frequency range: 10 to 1000 mhz ? modamp silicon monolithic gain stages ? high gain: 26.5 db (typ) ? low vswr applications ? if/rf amplification description the utm-1056 contains three monolithic microwave integrated circuits mounted on a thin-film substrate to provide an rf amplifier suitable for wideband, high-gain applications. internal blocking capacitors couple the rf through this three-stage amplifier. the utm-1056 is offered in the to-8 hermetic package. utm-1056 pin configuration utmto-8t schematic maximum ratings parameter maximum dc voltage +17 volts continuous rf input power +20 dbm operating case temperature C55 to +125 c storage temperature C62 to +150 c r series burn-in temperature +100 c thermal characteristics 1 q jc 100/90/90 c/w 2 active transistor power dissipation 175/240/308 mw 2 junction temperature above case temperature 18/22/28 c 2 mtbf (mil-hdbk-217e, a uf @ 90 c) 284,100 hrs. notes: 1. values refer to 1st, 2nd, 3rd stage transistors respectively. ground case ground v + rf out rf in gain db rf out rf in v+ weight: (typical) utm2.1 grams
2 electrical specifications (measured in 50 w system @ +15 vdc nominal unless otherwise noted) symbol unit t c = e55 to +85 c 10-1000 25.0 2.0 7.0 +10.5 1.7:1 1.7:1 ? ? ? ? mhz db db db dbm ? ? dbm dbm dbm ma t c = 0 to 50 c guaranteed specifications typical t c = 25 c 10-1000 26.5 0.9 5.5 +13.5 1.4:1 1.4:1 +26.0 +40.0 +45.0 135 10-1000 25.5 2.0 6.5 +12.0 1.7:1 1.7:1 ? ? ? ? characteristic frequency range small signal gain (min.) gain flatness (max.) noise figure (max.) power output @ +1 db comp. (min.) input vswr (max.) output vswr (max.) two tone 3rd order intercept point two tone 2nd order intercept point one tone 2nd harmonic intercept point dc current bw gp ? nf p 1db ? ? ip 3 ip 2 hp 2 i d typical performance over temperature (@ +15 vdc unless otherwise noted) key: +25 c +85 c -55 c 28 gain, db 5 gain frequency, mhz 200 27 400 800 1000 26 600 noise figure, db frequency, mhz noise figure 6 5 4 3 25 5 200 400 800 1000 600 1200 1200 7
power output
@ 1 db gain
compression, dbm power output frequency, mhz vswr input vswr frequency, mhz vswr output vswr frequency, mhz 15 2.0 1.0 1.75 13 35 ip 3 , dbm third-order intercept point frequency, mhz 5 second-order intercept point frequency, mhz second-harmonic intercept point frequency, mhz 200 65 60 600 20 400 800 25 1000 55 30 ip 2 , dbm hp 2 , dbm 11 65 45 55 9 2.0 1.0 35 50 45 5 200 400 800 600 1000 1200 1.5 1.25 5 200 400 800 600 1000 1200 1.75 1.5 1.25 5 200 400 800 600 1000 1200 1200 5 200 600 400 800 1000 1200 5 200 600 400 800 1000 1200
17 40
3 automatic network analyzer measurements frequency vswr gain phase group delay vswr mhz in db dev ns out numerical readings bias = 15.00 volts 100.0 1.06 27.11 e1.39 .00 1.16 200.0 1.04 26.99 e.77 .67 1.21 300.0 1.05 26.73 e.48 .67 1.23 400.0 1.06 26.48 .18 .66 1.26 500.0 1.05 26.52 .94 .65 1.30 600.0 1.06 26.76 2.49 .67 1.30 700.0 1.13 26.68 1.91 .71 1.31 800.0 1.18 26.70 .47 .72 1.34 900.0 1.22 26.70 e.39 .73 1.31 1000.0 1.28 26.49 e2.96 .77 1.24 1100.0 1.36 26.12 .79 1.14 1200.0 1.44 25.73 .79 1.09 1300.0 1.55 25.00 .80 1.30 1400.0 1.70 23.67 .78 1.63 1500.0 1.68 23.16 .79 1.87 1600.0 1.72 21.70 .81 2.50 1700.0 1.77 19.89 .75 3.20 1800.0 1.81 17.56 .70 3.82 1900.0 1.76 15.65 .63 4.18 2000.0 1.70 13.62 .00 4.46 linearization range: 100.0 to 1000.0 mhz (typical production unit @ +25 c ambient) bias = 15.00 volts 135 ma s-parameters s 21 100.00 .005 66.7 26.968 155.9 e58.461 e86.5 .095 4.2 200.00 .014 71.0 26.819 129.9 e51.146 e18.7 .096 7.3 300.00 .022 60.6 26.771 107.9 e62.887 29.9 .105 4.0 400.00 .029 66.4 26.495 82.6 e52.593 e9.4 .117 1.2 500.00 .016 74.1 26.567 59.1 e55.136 e.8 .132 e4.7 600.00 .017 95.3 26.513 35.1 e52.968 e21.2 .134 e13.2 700.00 .062 112.8 26.689 10.1 e51.633 e26.9 .128 e18.2 800.00 .074 99.2 26.636 e15.3 e51.910 e39.9 .148 e26.9 900.00 .078 91.6 26.532 e41.2 e52.173 e66.5 .144 e44.3 1000.00 .107 84.8 26.515 e68.2 e53.165 e61.3 .115 e64.6 1100.00 .134 84.6 25.953 e96.9 e52.159 e82.0 .060 e99.7 1200.00 .170 74.9 25.763 e125.3 e51.498 e78.5 .041 151.7 1300.00 .213 67.3 24.976 e153.2 e55.669 e95.1 .123 96.2 1400.00 .241 55.5 24.022 178.3 e57.330 e76.3 .235 66.2 1500.00 .284 39.1 22.711 150.5 e50.292 .6 .299 41.7 1600.00 .257 27.7 21.627 120.4 e48.659 e44.7 .433 31.8 1700.00 .256 21.9 19.874 94.0 e50.520 e117.8 .524 12.1 1800.00 .274 15.5 17.720 68.4 e58.857 e33.9 .580 e5.3 1900.00 .267 6.7 15.558 45.4 e55.695 e39.2 .618 e18.5 2000.00 .258 e.8 13.380 25.0 e58.326 e30.1 .643 e29.6 frequency mhz mag ang db ang db ang mag ang s 11 s 22 s 12
case drawings to-8t notes (unless otherwise specified): 1. dimensions are specified in inches 2. tolerances: xx .02 xxx .010 product options uto C 509r screening option
blank = no screening
r = r-series screening
for more information on r-series screening,
see reliability screening, pub. 5963-3240e. model number prefix
uto-
utm-
ppa- model number utc ?509-1 connector option
for tc-1 case the only connector option
available is the -1. the -1 option consists
of a sma female connector on both the
input and output (see note). model number prefix
utc- model number note: r-series screening is not available in the tc-1 case as the case is non-hermetic. .031 .031 .50
dia .450
dia max .200 .017 0.185
?0.015 +.002 - 001 .150
typ .300
typ ground case
ground v .150
typ 3 4 2 1 45 approximate weight 2.1 grams + rf in rf out glass ring
.060 dia typ
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